High‐Performance Thin‐Film VCSELs Integrated with a Copper‐Plated Heatsink

High-performance continuous-wave (CW) vertical-cavity surface-emitting lasers (VCSELs) rely on efficient thermal management for which top-emitting 930 nm thin-film VCSELs are integrated with a copper-plated heatsink by using double-transfer technique, exhibiting the low-power consumption, high-power, and temperature-stable VCSEL operation. In this study, structures, including highly n-doped GaAs ohmic lattice-matched InGaP etch-stop layers, epitaxially grown via low-pressure metalorganic chemical vapor deposition (LP-MOCVD) system. The electrical optical properties of substrate-removal investigated under CW operation, compared to those bulk-type onto n-GaAs substrates. differential series resistance (85.92 Ω) is 9.16% lower than 94.59 Ω (607 K W−1) 46.33% 1131 W−1 VCSEL, maximum peak power (11.70 mW) at 24 mA 12.07% higher 10.44 mW 22.40 room temperature (25 °C).